Self‐repairable, high‐uniform conductive‐bridge random access memory based on amorphous NbSe₂

Abstract Conductive‐bridge random access memory (CBRAM) emerges as a promising candidate for next‐generation and storage device. However, CBRAMs are prone to degenerate fail during electrochemical metallization processes. To address this issue, herein we propose self‐repairability strategy CBRAMs. Amorphous NbSe 2 was designed the resistive switching layer, with Cu Au top bottom electrodes, respectively. The demonstrate exceptional cycle‐to‐cycle device‐to‐device uniformity, forming‐free compliance current‐free characteristics, low‐operation voltage, competitive endurance retention performance. Most importantly, self‐repairable behavior is discovered first time in CBRAM. device after failure can recover its performance initially normal state by operating slightly large reset voltage. existence of conductive filament excellent controllability migration layer has been revealed broken‐down point approach, which responsible Our high‐uniform amorphous CBRAM may open door development devices future.